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IRFI4321PBF - Infineon

Description: MOSFET MOSFT 150V 34A 16mOhm 73nC

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Symbol
IRFI4321PBF - Infineon - PCB symbol
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PCB Footprints
IRFI4321PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 Full-Pak
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3D Models
IRFI4321PBF - Infineon - 3D model - Transistor Outline, Vertical - TO-220 Full-Pak
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IRFI4321PBF Details

  • Manufacturer Part Number:

    IRFI4321PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.92

  • Avalanche Energy Rating (Eas):

    170 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    34 A

  • Drain-source On Resistance-Max:

    0.016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    46 W

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFI4321PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFI4321PBF is -55°C to 175°C.
  • To ensure reliability, follow the recommended assembly and handling procedures, and ensure that the device is operated within the specified voltage and current ratings. Additionally, consider using a thermal design that allows for efficient heat dissipation.
  • To minimize EMI, use a multi-layer PCB with a solid ground plane, and keep the high-frequency traces short and away from the device's pins. Also, use a shielded cable or a coaxial cable for the gate drive signal.
  • No, the IRFI4321PBF is rated for a maximum voltage of 500V. Using it in an application above 500V may result in device failure or reduced reliability.
  • Handle the device with ESD-protective equipment, such as wrist straps or mats, and ensure that the device is stored in an ESD-protective package. Also, use ESD-protected workstations and follow proper ESD-handling procedures.

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IRFI4321PBF Overview

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Part Image IRFI4228PBF Infineon Technologies AG

Power Field-Effect Transistor, 34A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB