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IRFI9Z14GPBF - Vishay

Description: P-Channel 60 V 5.3A (Tc) 27W (Tc) Through Hole TO-220-3 , 4V @ 250µA , -55°C ~ 175°C (TJ)

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IRFI9Z14GPBF - Vishay PCB footprint - Other - Other - TO-220 FULLPAK_2026
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IRFI9Z14GPBF Details

  • Manufacturer Part Number:

    IRFI9Z14GPBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.1

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    5.3 A

  • Drain-source On Resistance-Max:

    0.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    31 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    27 W

  • Pulsed Drain Current-Max (IDM):

    21 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFI9Z14GPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFI9Z14GPBF is -55°C to 175°C.
  • No, the IRFI9Z14GPBF is not a radiation-hardened device. It is a commercial-grade power MOSFET.
  • The recommended gate drive voltage for the IRFI9Z14GPBF is 10V to 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRFI9Z14GPBF is suitable for high-frequency switching applications up to 1MHz, but the user should ensure that the device is properly cooled and the switching losses are managed.
  • Yes, the IRFI9Z14GPBF is compatible with lead-free soldering processes, with a peak reflow temperature of 260°C.

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Power Field-Effect Transistor, 5.3A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB