Part Image

IRFIB6N60APBF - Vishay

Description: Power MOSFET

Download IRFIB6N60APBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRFIB6N60APBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-ren3
click to zoom
3D Models
IRFIB6N60APBF - Vishay  - 3D model - Transistor Outline, Vertical - TO-220-ren3
click to zoom

IRFIB6N60APBF Details

  • Manufacturer Part Number:

    IRFIB6N60APBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    290 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    5.5 A

  • Drain-source On Resistance-Max:

    0.75 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    37 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFIB6N60APBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFIB6N60APBF is -55°C to 175°C.
  • The IRFIB6N60APBF is a fast-switching IGBT, designed for high-frequency applications.
  • The maximum collector-emitter voltage (Vce) rating for the IRFIB6N60APBF is 600V.
  • Yes, the IRFIB6N60APBF is suitable for high-power applications, with a maximum collector current rating of 60A.
  • The typical turn-on time for the IRFIB6N60APBF is around 20-30ns, and the typical turn-off time is around 50-60ns.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRFIB6N60APBF Overview

Use the download button to access the IRFIB6N60APBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFIB, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRFIB6N60APBF

Showing 0 results

IRFIB6N60APBF Alternates

Showing results

Image Part Number Model
Part Image IRFIB6N60A Vishay Intertechnologies

Power Field-Effect Transistor, 5.5A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRFIB6N60APBF Vishay Siliconix

Power Field-Effect Transistor, 5.5A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRFIB6N60A International Rectifier

Power Field-Effect Transistor, 5.5A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET