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IRFL024NTRPBF - Infineon

Description: IRFL024NTRPBF N-Channel MOSFET, 4 A, 55 V HEXFET, 3 + Tab-Pin SOT-223 Infineon

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PCB Footprints
IRFL024NTRPBF - Infineon PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT-223_5
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3D Models
IRFL024NTRPBF - Infineon  - 3D model - SOT223 (3-Pin) - SOT-223_5
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IRFL024NTRPBF Details

  • Manufacturer Part Number:

    IRFL024NTRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOT-223, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    0.0028 A

  • Drain-source On Resistance-Max:

    0.075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PSSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFL024NTRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFL024NTRPBF is -55°C to 175°C.
  • The recommended storage temperature range for the IRFL024NTRPBF is -40°C to 125°C.
  • The maximum power dissipation for the IRFL024NTRPBF is 78W at a case temperature of 25°C.
  • The thermal resistance from junction to case (RθJC) for the IRFL024NTRPBF is 1.5°C/W.
  • Yes, the IRFL024NTRPBF is a RoHS-compliant device, meaning it meets the European Union's Restriction of Hazardous Substances directive.

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IRFL024NTRPBF Overview

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IRFL024NTRPBF Alternates

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Image Part Number Model
Part Image IRFL024NPBF International Rectifier

Small Signal Field-Effect Transistor, 2.8A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRFL024NTR International Rectifier

Small Signal Field-Effect Transistor, 2.8A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image AUIRFL024N International Rectifier

Small Signal Field-Effect Transistor, 0.0028A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRFL024N Infineon Technologies AG

Small Signal Field-Effect Transistor, 2.8A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRFL024NTR Infineon Technologies AG

Small Signal Field-Effect Transistor, 2.8A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

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