Part Image

IRFM460 - Infineon

Description: POWER MOSFET THRU-HOLE (TO-254AA), 500V, N-Channel

Download IRFM460 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRFM460 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-254AA_1
click to zoom
3D Models
IRFM460 - Infineon  - 3D model - Transistor Outline, Vertical - TO-254AA_1
click to zoom

IRFM460 Details

  • Manufacturer Part Number:

    IRFM460

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    4.46

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    1200 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    19 A

  • Drain-source On Resistance-Max:

    0.31 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-254AA

  • JESD-30 Code:

    S-MSFM-P3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    METAL

  • Package Shape:

    SQUARE

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    76 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFM460 Frequently Asked Questions (FAQs)

  • The IRFM460 is designed to operate up to 1 MHz, but it can be used at higher frequencies with reduced performance.
  • Proper thermal management is crucial for the IRFM460. Ensure good thermal contact between the device and a heat sink, and consider using a thermal interface material to reduce thermal resistance.
  • The recommended gate drive voltage for the IRFM460 is between 10V and 15V, with a maximum of 20V. However, the optimal voltage may vary depending on the specific application and requirements.
  • Yes, the IRFM460 can be used in a synchronous rectification topology, but it requires careful design and layout consideration to ensure proper operation and minimize losses.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the IRFM460. Consider using a dedicated IC or a discrete component solution for OVP and OCP.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRFM460 Overview

Use the download button to access the IRFM460 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFM4, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRFM460

Showing 0 results

IRFM460 Alternates

Showing results

Image Part Number Model
Part Image IRFM460R1 TT Electronics Resistors

Power Field-Effect Transistor, 19A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

Part Image IRFM460-JQR-B TT Electronics Resistors

Power Field-Effect Transistor, 19A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

Part Image IRFM460-JQR-BR1 TT Electronics Power and Hybrid / Semelab Limited

Power Field-Effect Transistor, 19A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

Part Image IRFM460-JQR-B TT Electronics Power and Hybrid / Semelab Limited

Power Field-Effect Transistor, 19A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

Part Image IRFM460 TT Electronics Resistors

Power Field-Effect Transistor, 19A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

For a full list of alternate parts for IRFM460, check out Findchips.com