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IRFP064N - Infineon

Description: N-channel MOSFET,IRFP064N 98A 55V 25pcs

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IRFP064N - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC_1-ren1
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IRFP064N - Infineon  - 3D model - Transistor Outline, Vertical - TO-247AC_1-ren1
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IRFP064N Details

  • Manufacturer Part Number:

    IRFP064N

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    4

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    480 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    110 A

  • Drain-source On Resistance-Max:

    0.008 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    390 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFP064N Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFP064N is not explicitly stated in the datasheet, but it can be determined by consulting Infineon's application note AN2013-03, which provides SOA curves for the device. The SOA is typically limited by the device's thermal and voltage ratings.
  • To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material (TIM) such as thermal paste or a thermal pad, and ensuring that the heat sink is properly attached to the device. The PCB should also be designed to dissipate heat efficiently.
  • The recommended gate drive voltage for the IRFP064N is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can reduce switching losses, but may also increase gate charge and oscillations.
  • Yes, the IRFP064N is suitable for high-frequency switching applications up to several hundred kHz. However, it's essential to consider the device's switching losses, gate charge, and parasitic inductances when designing the circuit. Additionally, the PCB layout and component selection should be optimized for high-frequency operation.
  • To protect the IRFP064N from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse or a current limiter can be used to detect and limit excessive currents.

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IRFP064N Overview

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Part Image AUIRFP064N Infineon Technologies AG

Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC