AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas):
480 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
55 V
Drain Current-Max (ID):
110 A
Drain-source On Resistance-Max:
0.008 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-247AC
JESD-30 Code:
R-PSFM-T3
JESD-609 Code:
e3
Number of Elements:
1
Number of Terminals:
3
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
150 W
Pulsed Drain Current-Max (IDM):
390 A
Qualification Status:
Not Qualified
Surface Mount:
NO
Terminal Finish:
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form:
THROUGH-HOLE
Terminal Position:
SINGLE
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
IRFP064NPBF Frequently Asked Questions (FAQs)
The maximum operating temperature range for the IRFP064NPBF is -55°C to 175°C.
To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified ratings and guidelines.
The recommended gate drive voltage for the IRFP064NPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
Yes, the IRFP064NPBF is suitable for switching applications due to its low RDS(on) and high current capability. However, ensure proper gate drive and layout to minimize switching losses.
Use a suitable overvoltage protection circuit, such as a zener diode or a transient voltage suppressor, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
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IRFP064NPBF Overview
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