Part Image

IRFP140PBF - Vishay

Description: Vishay Siliconix IRFP140PBF N-channel MOSFET Transistor, 31 A, 100 V, 3-Pin TO-247AC

Download IRFP140PBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRFP140PBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IRFP460PBF_a
click to zoom
3D Models
IRFP140PBF - Vishay  - 3D model - Transistor Outline, Vertical - IRFP460PBF_a
click to zoom

IRFP140PBF Details

  • Manufacturer Part Number:

    IRFP140PBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    40 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.1

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    31 A

  • Drain-source On Resistance-Max:

    0.077 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    180 W

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFP140PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFP140PBF is -55°C to 175°C.
  • To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
  • The recommended gate drive voltage for the IRFP140PBF is between 10V to 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRFP140PBF is suitable for switching applications due to its low gate charge and fast switching times.
  • Handle the device by the body, use an anti-static wrist strap, and store the device in an anti-static bag or container to prevent ESD damage.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRFP140PBF Overview

Use the download button to access the IRFP140PBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFP1, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRFP140PBF

Showing 0 results

IRFP140PBF Alternates

Showing results

Image Part Number Model
Part Image IRFP140PBF Vishay Siliconix

Power Field-Effect Transistor, 31A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IRFP140 FCI Semiconductor

Power Field-Effect Transistor, 31A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Part Image IRFP140 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 31A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IRFP140 Texas Instruments

IRFP140

Part Image IRFP140 Vishay Intertechnologies

Power Field-Effect Transistor, 31A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

For a full list of alternate parts for IRFP140PBF, check out Findchips.com