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IRFP150PBF - Vishay

Description: IRFP150PBF N-Channel MOSFET, 41 A, 100 V, 3-Pin TO-247AC Vishay

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PCB Footprints
IRFP150PBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC_(H=5.21mm)
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3D Models
IRFP150PBF - Vishay  - 3D model - Transistor Outline, Vertical - TO-247AC_(H=5.21mm)
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IRFP150PBF Details

  • Manufacturer Part Number:

    IRFP150PBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247AC

  • Pin Count:

    3

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED, FAST SWITCHING

  • Avalanche Energy Rating (Eas):

    830 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    41 A

  • Drain-source On Resistance-Max:

    0.055 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    180 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFP150PBF Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFP150PBF is typically defined by the manufacturer as the region where the device can operate safely without damage. This information is usually provided in the datasheet or in a separate application note. For the IRFP150PBF, the SOA is typically limited by the maximum drain-source voltage (Vds) and drain current (Id) ratings.
  • To ensure proper thermal management of the IRFP150PBF, it's essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material (TIM) such as thermal paste or thermal tape, and ensuring good contact between the device and the heat sink. Additionally, the PCB design should allow for good airflow and heat dissipation.
  • The recommended gate drive voltage for the IRFP150PBF is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can help to reduce switching losses and improve the device's overall performance.
  • To protect the IRFP150PBF from electrostatic discharge (ESD), it's essential to handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and storing the device in an ESD-safe environment. Additionally, the PCB design should include ESD protection components, such as TVS diodes or ESD protection arrays.
  • The maximum allowed drain-source voltage (Vds) for the IRFP150PBF is 150V, as specified in the datasheet. Exceeding this voltage can damage the device.

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IRFP150PBF Overview

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Part Image IRFP150 Intersil Corporation

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Part Image IRFP150 Harris Semiconductor

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Part Image IRFP150 TT Electronics Power and Hybrid / Semelab Limited

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Part Image IRFP150 STMicroelectronics

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