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IRFP250 - STMicroelectronics

Description: TYPICAL RDS(on) = 0.073Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ NEW HIGH VOLTAGE BENCHMARK ■ GATE CHARGE MINIMIZED

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IRFP250 - STMicroelectronics - PCB symbol
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PCB Footprints
IRFP250 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 mechanical data-
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IRFP250 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247 mechanical data-
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IRFP250 Details

  • Manufacturer Part Number:

    IRFP250

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247

  • Package Description:

    TO-247, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    600 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    33 A

  • Drain-source On Resistance-Max:

    0.085 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    120 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    180 W

  • Pulsed Drain Current-Max (IDM):

    132 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFP250 Frequently Asked Questions (FAQs)

  • The maximum SOA for the IRFP250 is typically defined by the voltage and current ratings. The device can handle up to 200V and 30A, but the SOA curve in the datasheet provides more detailed information on the safe operating region.
  • To ensure the IRFP250 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive circuit should be able to provide a sufficient current to charge the gate capacitance quickly.
  • The thermal resistance (Rth) of the IRFP250 is typically around 0.5°C/W for the junction-to-case thermal resistance (Rthjc) and 1.5°C/W for the junction-to-ambient thermal resistance (Rthja).
  • Yes, the IRFP250 can be used in high-frequency switching applications, but the gate drive circuit should be optimized to minimize switching losses and ensure reliable operation. The device's switching characteristics, such as the rise and fall times, should be considered in the design.
  • To protect the IRFP250 from overvoltage and overcurrent, consider using a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage, and a current sense resistor or a fuse to detect and respond to overcurrent conditions.

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IRFP250 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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