AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas):
560 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
200 V
Drain Current-Max (ID):
50 A
Drain-source On Resistance-Max:
0.04 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-247AC
JESD-30 Code:
R-PSFM-T3
JESD-609 Code:
e3
Number of Elements:
1
Number of Terminals:
3
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
300 W
Pulsed Drain Current-Max (IDM):
200 A
Qualification Status:
Not Qualified
Surface Mount:
NO
Terminal Finish:
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form:
THROUGH-HOLE
Terminal Position:
SINGLE
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
IRFP260NPBF Frequently Asked Questions (FAQs)
The maximum SOA for the IRFP260NPBF is typically defined by the manufacturer as the maximum voltage and current ratings, which are 200V and 46A respectively. However, it's essential to consult the datasheet and application notes for specific guidance on SOA to ensure reliable operation.
Proper thermal management is crucial for the IRFP260NPBF. Ensure good heat sinking, use a thermal interface material (TIM) between the device and heat sink, and maintain a low thermal resistance (Rth) to prevent overheating. Consult the datasheet for thermal resistance values and follow recommended PCB design guidelines.
The recommended gate drive voltage for the IRFP260NPBF is typically between 10V to 15V, with a maximum gate-source voltage of ±20V. However, it's essential to consult the datasheet and application notes for specific guidance on gate drive voltage and circuit design.
To protect the IRFP260NPBF from ESD, handle the device by the body or use an anti-static wrist strap, store the device in anti-static packaging, and use ESD-protected workstations. Follow proper ESD handling procedures to prevent damage during manufacturing, testing, and assembly.
The maximum allowed dv/dt for the IRFP260NPBF is typically specified in the datasheet as 50V/ns. However, it's essential to consult the datasheet and application notes for specific guidance on dv/dt and circuit design to prevent unwanted turn-on or oscillations.
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IRFP260NPBF Overview
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