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IRFP350PBF - Vishay

Description: N-channel MOSFET,IRFP350 16A 400V

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PCB Footprints
IRFP350PBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - SIHG068N60EF-GE3
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3D Models
IRFP350PBF - Vishay  - 3D model - Transistor Outline, Vertical - SIHG068N60EF-GE3
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IRFP350PBF Details

  • Manufacturer Part Number:

    IRFP350PBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247AC

  • Pin Count:

    3

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    390 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    400 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    180 W

  • Pulsed Drain Current-Max (IDM):

    64 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFP350PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFP350PBF is -55°C to 175°C.
  • To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
  • The maximum allowable voltage for the IRFP350PBF is 500V, but it's recommended to operate within the specified maximum voltage rating of 400V to ensure reliability.
  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or a current-sensing resistor, to prevent damage to the device.
  • The recommended gate drive voltage for the IRFP350PBF is between 10V to 15V, but it's essential to consult the datasheet for specific gate drive requirements.

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IRFP350PBF Overview

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IRFP350PBF Alternates

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Image Part Number Model
Part Image IRFP350 Harris Semiconductor

Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IRFP350PBF Vishay Siliconix

Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IRFP350 International Rectifier

Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Part Image IRFP350PBF International Rectifier

Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Part Image IRFP350 Vishay Siliconix

Power Field-Effect Transistor, 16A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

For a full list of alternate parts for IRFP350PBF, check out Findchips.com