Part Image

IRFP360 - Vishay

Description: MOSFET N-Chan 400V 23 Amp

Download IRFP360 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRFP360 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO247AC
click to zoom
3D Models
IRFP360 - Vishay  - 3D model - Transistor Outline, Vertical - TO247AC
click to zoom

IRFP360 Details

  • Manufacturer Part Number:

    IRFP360

  • Pbfree Code:

    No

  • Rohs Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247AC

  • Pin Count:

    3

  • Reach Compliance Code:

    Unknown

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1200 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    400 V

  • Drain Current-Max (ID):

    23 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    280 W

  • Pulsed Drain Current-Max (IDM):

    92 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFP360 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFP360 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the boundaries of the maximum voltage, current, and power dissipation ratings to ensure reliable operation.
  • The junction-to-case thermal resistance (RθJC) for the IRFP360 is not directly provided in the datasheet. However, you can estimate it using the thermal resistance values provided in the datasheet. RθJC can be calculated as RθJC = RθJA - RθCS, where RθJA is the junction-to-ambient thermal resistance and RθCS is the case-to-sink thermal resistance.
  • The recommended gate drive voltage for the IRFP360 is not explicitly stated in the datasheet. However, as a general rule, a gate drive voltage of 10-15V is typically recommended for most power MOSFETs, including the IRFP360. This ensures reliable switching and minimizes the risk of gate oxide damage.
  • The IRFP360 is a power MOSFET designed for high-power, low-frequency applications. While it can be used in high-frequency switching applications, its performance may not be optimal due to its relatively high gate charge and output capacitance. It's recommended to evaluate the device's performance in your specific application and consider alternative devices optimized for high-frequency switching if necessary.
  • To ensure proper cooling of the IRFP360, it's essential to provide a good thermal path from the device to a heat sink or other cooling mechanism. This can be achieved by applying a thermal interface material (TIM) to the device's drain pad, using a heat sink with a low thermal resistance, and ensuring good airflow around the device. The datasheet provides guidance on the maximum junction temperature and thermal resistance values to help with thermal design.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRFP360 Overview

Use the download button to access the IRFP360 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFP3, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRFP360

Showing 0 results

IRFP360 Alternates

Showing results

Image Part Number Model
Part Image IRFP360 Vishay Siliconix

Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IRFP360PBF International Rectifier

Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Part Image IRFP360 International Rectifier

Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Part Image IRFP360 Thomson Consumer Electronics

Power Field-Effect Transistor, 23A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Part Image IRFP360 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

For a full list of alternate parts for IRFP360, check out Findchips.com