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IRFP450APBF - Vishay

Description: N-channel MOSFET,IRFP450A 14A 500V

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IRFP450APBF - Vishay - PCB symbol
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PCB Footprints
IRFP450APBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IRFP450APBF-1
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IRFP450APBF - Vishay - 3D model - Transistor Outline, Vertical - IRFP450APBF-1
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IRFP450APBF Details

  • Manufacturer Part Number:

    IRFP450APBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    760 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    190 W

  • Pulsed Drain Current-Max (IDM):

    56 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFP450APBF Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFP450APBF is not explicitly stated in the datasheet. However, it can be determined by consulting the SOA curves provided in the datasheet. The SOA curves provide a graphical representation of the maximum drain-to-source voltage and current that the device can handle without exceeding its thermal limits.
  • To ensure proper thermal management, it is essential to provide a good thermal path from the device to a heat sink or other cooling mechanism. This can be achieved by applying a thermal interface material (TIM) to the device, using a heat sink with a high thermal conductivity, and ensuring good contact between the device and heat sink. The thermal resistance of the device (RθJA) is specified in the datasheet and can be used to estimate the maximum junction temperature.
  • The maximum voltage rating for the IRFP450APBF is 500V, as specified in the datasheet. However, it is essential to note that the device can withstand voltage transients exceeding this rating for short periods, as specified in the datasheet.
  • To protect the IRFP450APBF from electrostatic discharge (ESD), it is essential to handle the device in an ESD-safe environment, use ESD-safe packaging and storage materials, and ensure that all personnel handling the device are properly grounded. The device is rated to withstand ESD events up to 2kV, as specified in the datasheet.
  • The maximum current rating for the IRFP450APBF is 14A, as specified in the datasheet. However, this rating is dependent on the device's thermal management and the maximum junction temperature. The device's current rating can be derated based on the thermal resistance and maximum junction temperature.

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IRFP450APBF Overview

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IRFP450APBF Alternates

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Image Part Number Model
Part Image IRFP450APBF International Rectifier

Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Part Image IRFP450APBF Vishay Siliconix

Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Part Image IRFP450A Samsung Semiconductor

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Part Image IRFP450A Vishay Siliconix

Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Part Image IRFP450A Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
For a full list of alternate parts for IRFP450APBF, check out Findchips.com