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IRFP450LC - Vishay

Description: N-channel MOSFET,IRFP450LC 14A 500V

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IRFP450LC - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC (High Voltage)
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3D Models
IRFP450LC - Vishay  - 3D model - Transistor Outline, Vertical - TO-247AC (High Voltage)
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IRFP450LC Details

  • Manufacturer Part Number:

    IRFP450LC

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    190 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFP450LC Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFP450LC is not explicitly stated in the datasheet, but it can be determined by consulting Vishay's application note AN1035, which provides SOA curves for the device.
  • To ensure proper thermal management, the IRFP450LC should be mounted on a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be designed to handle the maximum power dissipation of the device, and the thermal interface material should have a thermal conductivity of at least 1 W/m-K.
  • The recommended gate drive voltage for the IRFP450LC is between 10V and 15V, with a maximum gate-source voltage of 20V. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI.
  • Yes, the IRFP450LC can be used in high-frequency switching applications up to 100 kHz, but the user should ensure that the device is properly snubbed to prevent ringing and oscillations. Additionally, the user should consider the device's switching losses and ensure that the heat sink is designed to handle the increased power dissipation.
  • Yes, the IRFP450LC is compatible with lead-free soldering processes, but the user should ensure that the soldering temperature does not exceed 260°C to prevent damage to the device.

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Part Image IRFP450LCPBF Vishay Intertechnologies

Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC