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IRFP450PBF - Vishay

Description: MOSFET N-CH 500V HEXFET MOSFET

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IRFP450PBF - Vishay - PCB symbol
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PCB Footprints
IRFP450PBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC_
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IRFP450PBF - Vishay - 3D model - Transistor Outline, Vertical - TO-247AC_
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IRFP450PBF Details

  • Manufacturer Part Number:

    IRFP450PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    760 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    180 W

  • Pulsed Drain Current-Max (IDM):

    56 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFP450PBF Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFP450PBF is typically defined by the manufacturer as the region where the device can operate safely without damage. This information is usually provided in the datasheet or in a separate application note. For the IRFP450PBF, the SOA is typically limited by the maximum drain-source voltage (Vds) and drain current (Id) ratings.
  • To ensure proper thermal management of the IRFP450PBF, it's essential to provide a good thermal path from the device to a heat sink or other cooling mechanism. This can be achieved by applying a thermal interface material (TIM) to the device, using a heat sink with a high thermal conductivity, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the IRFP450PBF is typically between 10V to 15V, depending on the specific application and required switching speed. A higher gate drive voltage can result in faster switching times, but may also increase power consumption and electromagnetic interference (EMI).
  • To protect the IRFP450PBF from electrostatic discharge (ESD), it's essential to handle the device by the body or use an anti-static wrist strap or mat. The device should also be stored in an anti-static bag or tube, and all equipment used to handle the device should be grounded.
  • The maximum allowed drain-source voltage (Vds) for the IRFP450PBF is 500V. Exceeding this voltage can result in device damage or failure.

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IRFP450PBF Overview

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IRFP450PBF Alternates

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Part Image IRFP450PBF International Rectifier

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Part Image IRFP450 Intersil Corporation

Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Part Image IRFP450 Vishay Siliconix

Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Part Image IRFP450 Texas Instruments

IRFP450
Part Image IRFP450 Harris Semiconductor

Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
For a full list of alternate parts for IRFP450PBF, check out Findchips.com