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IRFP460A - Vishay

Description: MOSFET N-CH 500V 20A TO247-3

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IRFP460A - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC_
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IRFP460A - Vishay  - 3D model - Transistor Outline, Vertical - TO-247AC_
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IRFP460A Details

  • Manufacturer Part Number:

    IRFP460A

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    960 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.27 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    280 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFP460A Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFP460A is not explicitly stated in the datasheet. However, it can be determined by consulting the SOA curves provided in the datasheet. The SOA curves provide a graphical representation of the maximum drain-to-source voltage and drain current that the device can handle without experiencing thermal runaway or other forms of damage.
  • To ensure proper thermal management of the IRFP460A, it is essential to provide a heat sink with a sufficient thermal conductivity and a thermal interface material (TIM) with a low thermal resistance. The heat sink should be designed to keep the junction temperature (Tj) below the maximum rated value of 175°C. Additionally, the PCB layout should be designed to minimize thermal resistance and ensure good airflow around the device.
  • The recommended gate drive voltage for the IRFP460A is between 10V and 15V. A higher gate drive voltage can reduce the on-state resistance (Rds(on)) and improve the device's switching performance. However, it is essential to ensure that the gate drive voltage does not exceed the maximum rated value of 20V to prevent damage to the device.
  • To protect the IRFP460A from electrostatic discharge (ESD), it is essential to handle the device by the body or use an anti-static wrist strap or mat. The device should be stored in an anti-static bag or tube, and the PCB should be designed with ESD protection components, such as TVS diodes or ESD protection arrays, to prevent ESD damage.
  • The maximum allowed drain-source voltage (Vds) for the IRFP460A is 500V. Exceeding this voltage can cause permanent damage to the device. It is essential to ensure that the device is operated within the recommended voltage range to prevent damage and ensure reliable operation.

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Part Image IRFP460APBF Vishay Siliconix

Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IRFP460APBF International Rectifier

Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Part Image IRFP460A Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 20A I(D), 500V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247