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IRFP460APBF - Vishay

Description: IRFP460APBF

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IRFP460APBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC_
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IRFP460APBF - Vishay  - 3D model - Transistor Outline, Vertical - TO-247AC_
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IRFP460APBF Details

  • Manufacturer Part Number:

    IRFP460APBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    960 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.27 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    18 pF

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    280 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFP460APBF Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFP460APBF is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance, maximum junction temperature, and maximum current rating. A safe operating area curve can be generated using the device's thermal model and the application's specific operating conditions.
  • To minimize switching losses, ensure the IRFP460APBF is driven with a high-current, low-impedance gate driver that can supply the required gate charge (Qg) quickly. A gate resistor (Rg) can be added to slow down the gate voltage rise time and reduce electromagnetic interference (EMI). Optimize the gate drive circuitry to achieve a gate voltage rise time of around 10-20 ns.
  • For optimal thermal performance, use a multi-layer PCB with a solid ground plane and a thermal relief pattern under the device. Ensure good thermal conductivity between the device and the heat sink or PCB. Use a heat sink with a thermal interface material (TIM) and apply a thin layer of thermal grease. Follow Vishay's recommended PCB layout and thermal management guidelines for the IRFP460APBF.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the IRFP460APBF from overvoltage conditions. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Ensure the protection circuitry is designed to respond quickly to fault conditions and can handle the device's maximum current rating.
  • The IRFP460APBF is a high-reliability device with a long expected lifetime. Vishay provides a reliability report and a failure-in-time (FIT) rate for the device. Follow proper design, manufacturing, and testing procedures to ensure the device operates within its specified ratings and environmental conditions. Regularly monitor the device's operating conditions and perform maintenance as needed to ensure optimal performance and reliability.

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Part Image IRFP460APBF Vishay Siliconix

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Part Image IRFP460APBF International Rectifier

Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Part Image IRFP460A Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 20A I(D), 500V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IRFP460A Vishay Intertechnologies

Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC