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IRFP460BPBF - Vishay

Description: Vishay IRFP460BPBF N-channel MOSFET Transistor, 20 A, 500 V, 3-Pin TO-247AC

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IRFP460BPBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC_1
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IRFP460BPBF - Vishay  - 3D model - Transistor Outline, Vertical - TO-247AC_1
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IRFP460BPBF Details

  • Manufacturer Part Number:

    IRFP460BPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    281 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.25 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    62 A

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN OVER NICKEL

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFP460BPBF Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFP460BPBF is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage ratings. As a general guideline, the SOA is typically limited by the device's thermal capabilities, and the user should ensure that the device operates within the recommended temperature range.
  • To minimize switching losses, ensure that the gate drive voltage is sufficient (typically 10-15V) and the gate resistance is low (typically <10 ohms). Also, use a gate driver with a high current capability to quickly charge and discharge the gate capacitance. Additionally, consider using a gate resistor to slow down the turn-on and turn-off transitions to reduce electromagnetic interference (EMI).
  • For optimal thermal performance, ensure that the IRFP460BPBF is mounted on a thermally conductive PCB material (e.g., FR4 or IMS) with a large copper area for heat dissipation. Use a thermal interface material (TIM) between the device and the heat sink, and ensure good thermal contact between the device and the heat sink. Keep the PCB layout compact and symmetrical to minimize parasitic inductances and capacitances.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the IRFP460BPBF from overvoltage conditions. For overcurrent protection, consider using a current sense resistor and a comparator or an overcurrent protection IC. Additionally, ensure that the device is operated within its recommended voltage and current ratings, and consider using a fuse or a circuit breaker to disconnect the power supply in case of a fault.
  • A typical gate drive circuit for the IRFP460BPBF consists of a gate driver IC, a gate resistor, and a bootstrap capacitor. For protection, consider using a gate-source zener diode to protect against gate-source overvoltage, and a drain-source zener diode to protect against drain-source overvoltage. Additionally, use a freewheeling diode to protect against back-EMF and reduce electromagnetic interference (EMI).

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