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IRFP90N20DPBF - Infineon

Description: MOSFET N-Channel 200V 94A TO247AC Infineon IRFP90N20DPBF N-channel MOSFET Transistor, 94 A, 200 V, 3-Pin TO-247AC

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PCB Footprints
IRFP90N20DPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC_5
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3D Models
IRFP90N20DPBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-247AC_5
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IRFP90N20DPBF Details

  • Manufacturer Part Number:

    IRFP90N20DPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1010 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    90 A

  • Drain-source On Resistance-Max:

    0.023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    580 W

  • Pulsed Drain Current-Max (IDM):

    380 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFP90N20DPBF Frequently Asked Questions (FAQs)

  • The maximum SOA for the IRFP90N20DPBF is typically defined by the device's voltage and current ratings. However, it's essential to consult the datasheet and application notes for specific guidance on SOA, as it may vary depending on the operating conditions.
  • Proper thermal management is crucial for the IRFP90N20DPBF. Ensure good heat sinking, use a thermal interface material (TIM) if necessary, and follow the recommended PCB layout and thermal design guidelines from Infineon.
  • The recommended gate drive circuits and voltage levels for the IRFP90N20DPBF can be found in the datasheet and application notes. Typically, a gate voltage of 10-15V is recommended, with a gate current capability of up to 10A.
  • To prevent ESD damage, handle the IRFP90N20DPBF with proper ESD protection measures, such as using an ESD wrist strap, mat, or workstation. Ensure that the device is stored in an ESD-protected environment.
  • The IRFP90N20DPBF is designed to meet high reliability standards. However, the lifespan and reliability of the device depend on various factors, including operating conditions, thermal management, and quality of the device. Consult the datasheet and reliability reports from Infineon for more information.

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IRFP90N20DPBF Overview

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