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IRFP9140 - Vishay

Description: MOSFET P-CH 100V 21A TO247-3

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IRFP9140 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC_2022
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IRFP9140 - Vishay  - 3D model - Transistor Outline, Vertical - TO-247AC_2022
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IRFP9140 Details

  • Manufacturer Part Number:

    IRFP9140

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    960 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    21 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    180 W

  • Pulsed Drain Current-Max (IDM):

    84 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFP9140 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFP9140 is not explicitly stated in the datasheet, but it can be determined by consulting Vishay's application note AN1033, which provides SOA curves for the device.
  • To ensure proper thermal management, the IRFP9140 should be mounted on a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be designed to handle the maximum power dissipation of the device, and the thermal interface material should be applied according to the manufacturer's instructions.
  • The recommended gate drive voltage for the IRFP9140 is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI.
  • Yes, the IRFP9140 can be used in high-frequency switching applications up to 1MHz, but the user should ensure that the device is properly snubbed to prevent ringing and oscillations. The user should also consider the device's switching losses and ensure that the heat sink is designed to handle the increased power dissipation.
  • The IRFP9140 is a commercial-grade device and may not meet the requirements for high-reliability or aerospace applications. For such applications, a radiation-hardened or high-reliability version of the device may be required, and the user should consult with Vishay's sales and engineering teams to determine the best solution.

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IRFP9140 Overview

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IRFP9140 Alternates

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Image Part Number Model
Part Image IRFP9140 Vishay Siliconix

Power Field-Effect Transistor, 21A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IRFP9140 Intersil Corporation

Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IRFP9140 International Rectifier

Power Field-Effect Transistor, 21A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Part Image SMW20P10 Vishay Siliconix

Transistor

Part Image IRFP9140 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

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