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IRFPF50PBF - Vishay

Description: MOSFET RECOMMENDED ALT 844-IRFPF50

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Symbol
IRFPF50PBF - Vishay - PCB symbol
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PCB Footprints
IRFPF50PBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC_
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3D Models
IRFPF50PBF - Vishay - 3D model - Transistor Outline, Vertical - TO-247AC_
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IRFPF50PBF Details

  • Manufacturer Part Number:

    IRFPF50PBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247AC

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    60 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.2

  • Avalanche Energy Rating (Eas):

    880 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    6.7 A

  • Drain-source On Resistance-Max:

    1.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    180 W

  • Pulsed Drain Current-Max (IDM):

    27 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFPF50PBF Frequently Asked Questions (FAQs)

  • The SOA for the IRFPF50PBF is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device to 50% of its maximum current rating for continuous operation.
  • To ensure the IRFPF50PBF is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate drive circuit can provide sufficient current to charge the gate capacitance quickly.
  • The maximum allowed voltage for the gate-source (Vgs) is ±20V, and for the gate-drain (Vgd) it is ±30V. Exceeding these limits can damage the MOSFET.
  • The IRFPF50PBF has a high power dissipation capability, but it still requires proper thermal management. Ensure good heat sinking, use a thermal interface material, and consider using a heat sink with a thermal resistance of 1°C/W or lower.
  • The maximum allowed current for the IRFPF50PBF is 50A, but this is dependent on the operating conditions, such as temperature, duty cycle, and PCB design. Always check the device's thermal and electrical characteristics to ensure safe operation.

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IRFPF50PBF Overview

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IRFPF50PBF Alternates

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Part Image IRFPF50 Vishay Intertechnologies

Power Field-Effect Transistor, 6.7A I(D), 900V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC