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IRFPG50 - Vishay

Description: Power Mosfet N-CH 1000V 6.1A TO-247AC

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PCB Footprints
IRFPG50 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC (High Voltage)
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3D Models
IRFPG50 - Vishay  - 3D model - Transistor Outline, Vertical - TO-247AC (High Voltage)
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IRFPG50 Details

  • Manufacturer Part Number:

    IRFPG50

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    4.65

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    800 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1000 V

  • Drain Current-Max (ID):

    6.1 A

  • Drain-source On Resistance-Max:

    2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    190 W

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFPG50 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFPG50 is not explicitly stated in the datasheet, but it can be determined by consulting the SOA curves provided in the application notes or by contacting Vishay Intertechnologies directly.
  • To ensure proper thermal management, the IRFPG50 should be mounted on a heat sink with a thermal resistance of less than 1°C/W, and the ambient temperature should be kept below 25°C. Additionally, the device should be operated within its specified power dissipation limits.
  • The recommended gate drive voltage for the IRFPG50 is between 10V and 15V, with a maximum gate-source voltage of ±20V. However, the optimal gate drive voltage may vary depending on the specific application and operating conditions.
  • Yes, the IRFPG50 can be used in high-frequency switching applications up to 100 kHz, but the device's switching losses and thermal management become more critical at higher frequencies. Consult the datasheet and application notes for more information on high-frequency operation.
  • To protect the IRFPG50 from ESD, handle the device by the body or use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected environment. Additionally, use ESD-sensitive handling procedures during assembly and installation.

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Part Image IRFPG50PBF Vishay Intertechnologies

Power Field-Effect Transistor, 6.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC