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IRFPS38N60LPBF - Vishay

Description: MOSFET MOSFET N-CHANNEL 600V

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IRFPS38N60LPBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IRFPS38N60LPBF
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IRFPS38N60LPBF - Vishay  - 3D model - Transistor Outline, Vertical - IRFPS38N60LPBF
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IRFPS38N60LPBF Details

  • Manufacturer Part Number:

    IRFPS38N60LPBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    680 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    38 A

  • Drain-source On Resistance-Max:

    0.15 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    540 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFPS38N60LPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IRFPS38N60LPBF is 175°C.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate drive circuit can provide sufficient current to charge the gate capacitance quickly.
  • The recommended gate resistor value depends on the specific application, but a typical value is between 10Ω to 100Ω. A lower value can help reduce switching losses, while a higher value can help reduce electromagnetic interference (EMI).
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the MOSFET from overvoltage. For overcurrent protection, use a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • The maximum allowable Vds for the IRFPS38N60LPBF is 600V.

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IRFPS38N60LPBF Overview

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Power Field-Effect Transistor, 38A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRFPS38N60LPBF International Rectifier

Power Field-Effect Transistor, 38A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET