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IRFPS40N50L - Vishay

Description: MOSFET N-CH 500V 46A SUPER247

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IRFPS40N50L - Vishay - PCB symbol
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IRFPS40N50L - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IRFPS40N50L
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IRFPS40N50L - Vishay - 3D model - Transistor Outline, Vertical - IRFPS40N50L
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IRFPS40N50L Details

  • Manufacturer Part Number:

    IRFPS40N50L

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    4.64

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    920 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    46 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-274AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    540 W

  • Pulsed Drain Current-Max (IDM):

    180 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFPS40N50L Frequently Asked Questions (FAQs)

  • The RθJC for IRFPS40N50L is typically around 0.5°C/W, but it's recommended to check the specific datasheet or contact Vishay for the exact value.
  • While the IRFPS40N50L is a fast-switching MOSFET, it's not optimized for high-frequency applications above 100 kHz. For high-frequency switching, consider using a MOSFET with a lower gate charge (Qg) and a shorter turn-on/turn-off time.
  • The SOA for IRFPS40N50L is typically defined by the voltage and current limits. For example, at 25°C, the maximum drain-source voltage (Vds) is 500V, and the maximum drain current (Id) is 40A. However, it's essential to consult the datasheet and consider the specific application conditions.
  • The IRFPS40N50L is an industrial-grade MOSFET, not specifically designed for automotive applications. For automotive use, consider using AEC-Q101 compliant MOSFETs with enhanced reliability and robustness.
  • Yes, you can use multiple IRFPS40N50L MOSFETs to increase current handling, but ensure proper thermal management, gate drive, and layout to minimize parasitic inductances and resistances.

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IRFPS40N50L Overview

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IRFPS40N50L Alternates

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Part Image IRFPS40N50LPBF International Rectifier

Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA
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Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA