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IRFPS40N50LPBF - Vishay

Description: MOSFET N-CH 500V 46A SUPER247

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IRFPS40N50LPBF Details

  • Manufacturer Part Number:

    IRFPS40N50LPBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-274AA

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    920 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    46 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-274AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    540 W

  • Pulsed Drain Current-Max (IDM):

    180 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFPS40N50LPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFPS40N50LPBF is -55°C to 175°C.
  • To ensure reliability, follow the recommended storage and handling procedures, and ensure that the device is operated within the specified voltage and current ratings. Additionally, consider using a thermally conductive interface material to improve heat dissipation.
  • Yes, the IRFPS40N50LPBF is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is operated within the specified voltage and current ratings, and consider the effects of switching losses and thermal management.
  • To calculate the power dissipation, use the following formula: Pd = (Vds * Ids) + (Vgs * Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.
  • The recommended gate drive voltage for the IRFPS40N50LPBF is between 10 V and 15 V, with a maximum gate-source voltage of 20 V.

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IRFPS40N50LPBF Overview

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Part Image IRFPS40N50LPBF International Rectifier

Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA