Part Image

IRFPS40N60KPBF - Vishay

Description: MOSFET N-CH 600V HEXFET MOSFET

Download IRFPS40N60KPBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRFPS40N60KPBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IRFPS38N60LPBF
click to zoom
3D Models
IRFPS40N60KPBF - Vishay  - 3D model - Transistor Outline, Vertical - IRFPS38N60LPBF
click to zoom

IRFPS40N60KPBF Details

  • Manufacturer Part Number:

    IRFPS40N60KPBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247AC

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    600 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.13 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    570 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFPS40N60KPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IRFPS40N60KPBF is 175°C.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate drive circuit can provide sufficient current to charge the gate capacitance quickly.
  • The maximum current rating of the IRFPS40N60KPBF is 40A, but this is dependent on the case temperature and the duty cycle of the application.
  • To protect the MOSFET from overvoltage transients, use a voltage clamp or a transient voltage suppressor (TVS) diode in parallel with the MOSFET, and ensure the circuit is designed to handle voltage spikes and surges.
  • The recommended gate resistor value for the IRFPS40N60KPBF is typically in the range of 10Ω to 100Ω, depending on the specific application and gate drive circuit requirements.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRFPS40N60KPBF Overview

Use the download button to access the IRFPS40N60KPBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFPS, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRFPS40N60KPBF

Showing 0 results

IRFPS40N60KPBF Alternates

Showing results

Image Part Number Model
Part Image IRFPS40N60K International Rectifier

Power Field-Effect Transistor, 40A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Part Image IRFPS40N60KPBF International Rectifier

Power Field-Effect Transistor, 40A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC