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IRFR014TRLPBF-BE3 - Vishay

Description: N-Channel 60 V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount TO-252AA

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IRFR014TRLPBF-BE3 - Vishay PCB footprint - Other - Other - IRFR014TRLPBF-BE3-1
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IRFR014TRLPBF-BE3 Details

  • Manufacturer Part Number:

    IRFR014TRLPBF-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    27.4 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    7.7 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    29 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    25 W

  • Pulsed Drain Current-Max (IDM):

    31 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFR014TRLPBF-BE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IRFR014TRLPBF-BE3 is a standard SO-8 package with a 1.27mm pitch. The datasheet provides a recommended land pattern and soldering guidelines.
  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive PCB material, and ensuring good airflow around the device.
  • The maximum allowed voltage on the gate pin of the IRFR014TRLPBF-BE3 is ±20V, as specified in the datasheet. Exceeding this voltage can damage the device.
  • While the IRFR014TRLPBF-BE3 is a fast-switching MOSFET, it's not recommended for high-frequency switching applications (>100kHz) due to its relatively high gate charge and internal gate resistance, which can lead to increased power losses and reduced efficiency.
  • To prevent electrostatic discharge (ESD) damage, handle the IRFR014TRLPBF-BE3 with ESD-protective equipment, such as wrist straps, mats, and bags. Ensure that the device is stored in an ESD-protective package when not in use.

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