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IRFR024NTRPBF - Infineon

Description: 55V Single N-Channel IR MOSFET in a D-Pak package

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IRFR024NTRPBF - Infineon PCB footprint - Other - Other - D-PAK (TO-252AA)_4
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IRFR024NTRPBF - Infineon  - 3D model - Other - D-PAK (TO-252AA)_4
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IRFR024NTRPBF Details

  • Manufacturer Part Number:

    IRFR024NTRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.4

  • Additional Feature:

    AVALANCHE RATED, ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    71 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    68 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFR024NTRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFR024NTRPBF is -55°C to 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive interface material, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the IRFR024NTRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRFR024NTRPBF from ESD, handle the device by the body or use an anti-static wrist strap, and ensure that the workspace and equipment are ESD-safe.
  • The maximum allowable power dissipation for the IRFR024NTRPBF is 150W, but this can be affected by factors such as ambient temperature, thermal resistance, and duty cycle.

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IRFR024NTRPBF Overview

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Part Image IRFR024NTRLPBF Infineon Technologies AG

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Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR024NTRLPBF International Rectifier

Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image AUIRFR024NTRR International Rectifier

Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

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Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

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