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IRFR120NTRPBF - Infineon

Description: MOSFET 100V 1 N-CH HEXFET 210mOhms 16.7nC

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IRFR120NTRPBF - Infineon PCB footprint - Other - Other - D-PAK (TO-252AA)
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IRFR120NTRPBF - Infineon  - 3D model - Other - D-PAK (TO-252AA)
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IRFR120NTRPBF Details

  • Manufacturer Part Number:

    IRFR120NTRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    91 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    9.4 A

  • Drain-source On Resistance-Max:

    0.21 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    48 W

  • Pulsed Drain Current-Max (IDM):

    38 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFR120NTRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFR120NTRPBF is -55°C to 175°C.
  • To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
  • The maximum allowable voltage for the IRFR120NTRPBF is 100V.
  • Yes, the IRFR120NTRPBF is suitable for high-frequency switching applications up to 1MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • Handle the IRFR120NTRPBF with ESD-protective equipment, and ensure proper grounding and shielding during storage, handling, and assembly.

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IRFR120NTRPBF Overview

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Part Image IRFR120NTRRPBF International Rectifier

Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR120N International Rectifier

Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR120NTR International Rectifier

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Part Image IRFR120NTRRPBF Infineon Technologies AG

Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR120NTRL International Rectifier

Power Field-Effect Transistor, 9.3A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

For a full list of alternate parts for IRFR120NTRPBF, check out Findchips.com