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IRFR120TRLPBF-BE3 - Vishay

Description: MOSFET 100V N-CH HEXFET D-PAK

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IRFR120TRLPBF-BE3 - Vishay PCB footprint - Other - Other - DPAK (TO-252)
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IRFR120TRLPBF-BE3 Details

  • Manufacturer Part Number:

    IRFR120TRLPBF-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    210 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    7.7 A

  • Drain-source On Resistance-Max:

    0.27 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    34 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    31 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFR120TRLPBF-BE3 Frequently Asked Questions (FAQs)

  • The IRFR120TRLPBF-BE3 can operate from -55°C to 175°C, but the maximum junction temperature (TJ) is 175°C.
  • To ensure the MOSFET is fully turned on, the gate-source voltage (VGS) should be at least 10V, and the gate current (IG) should be sufficient to charge the gate capacitance quickly.
  • The maximum continuous drain current (ID) for the IRFR120TRLPBF-BE3 is 2.5A, but this can be increased to 7.5A for short pulses (e.g., 10ms).
  • To protect the MOSFET from voltage spikes and transients, use a snubber circuit or a TVS (transient voltage suppressor) diode in parallel with the MOSFET.
  • To minimize parasitic inductance and ensure proper operation, use a compact PCB layout with short leads, and place the MOSFET close to the decoupling capacitor and the load.

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