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IRFR1N60A - Vishay

Description: N-Channel 600 V 1.4A (Tc) 36W (Tc) Surface Mount D-Pak

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IRFR1N60A - Vishay PCB footprint - Other - Other - IRFR1N60A-2
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IRFR1N60A Details

  • Manufacturer Part Number:

    IRFR1N60A

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-252AA

  • Package Description:

    DPAK-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    93 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    1.4 A

  • Drain-source On Resistance-Max:

    7 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    36 W

  • Pulsed Drain Current-Max (IDM):

    5.6 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFR1N60A Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFR1N60A is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure safe operation.
  • To calculate the junction temperature (Tj) of the IRFR1N60A, you can use the following formula: Tj = Tc + (RθJA * Pd), where Tc is the case temperature, RθJA is the thermal resistance from junction to ambient, and Pd is the power dissipation. The thermal resistance values can be found in the datasheet.
  • The recommended PCB layout and thermal management for the IRFR1N60A involve using a thermal pad or heat sink to dissipate heat, keeping the device away from other heat sources, and using a sufficient copper area to reduce thermal resistance. A good rule of thumb is to use a minimum of 1 oz copper and a thermal pad with a minimum size of 1 inch x 1 inch.
  • Yes, the IRFR1N60A can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the application's switching frequency is within the device's specified limits. Additionally, proper PCB layout and decoupling are crucial to minimize ringing and ensure reliable operation.
  • The correct gate resistor value for the IRFR1N60A depends on the application's specific requirements, such as the switching frequency, voltage, and current. A general rule of thumb is to use a gate resistor value between 10 ohms and 100 ohms to ensure reliable switching and minimize ringing. However, it's recommended to consult the application notes and perform simulations to determine the optimal gate resistor value.

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IRFR1N60A Overview

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