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IRFR220PBF - Vishay

Description: N-Channel 200 V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount DPAK , 800mOhm , -55°C ~ 150°C (TJ)

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PCB Footprints
IRFR220PBF - Vishay PCB footprint - Other - Other - DPAK (TO-252)_2026-3.9
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3D Models
IRFR220PBF - Vishay  - 3D model - Other - DPAK (TO-252)_2026-3.9
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IRFR220PBF Details

  • Manufacturer Part Number:

    IRFR220PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.85

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    4.8 A

  • Drain-source On Resistance-Max:

    0.8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFR220PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFR220PBF is -55°C to 175°C.
  • Yes, the IRFR220PBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
  • The maximum drain-source voltage rating for the IRFR220PBF is 200V.
  • Yes, the IRFR220PBF can be used in high-power audio amplifier applications due to its high current rating and low on-resistance.
  • Yes, the IRFR220PBF is compatible with standard MOSFET gate drive circuits, making it easy to integrate into existing designs.

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IRFR220PBF Overview

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Part Image IRFR220TRPBF Vishay Siliconix

Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image IRFR220TRLPBF Vishay Siliconix

Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image IRFR220TR Vishay Siliconix

Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image IRFR220TRL Vishay Siliconix

Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image IRFR220,118 NXP Semiconductors

Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

For a full list of alternate parts for IRFR220PBF, check out Findchips.com