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IRFR24N15DPBF - Infineon

Description: N-Channel 150 V 24A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK),45 nC @ 10 V,95mOhm @ 14A, 10V -55°C ~ 175°C (TJ)

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IRFR24N15DPBF - Infineon PCB footprint - Other - Other - PG-TO252-3-901_2026
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IRFR24N15DPBF Details

  • Manufacturer Part Number:

    IRFR24N15DPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    170 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    24 A

  • Drain-source On Resistance-Max:

    0.095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    46 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    140 W

  • Pulsed Drain Current-Max (IDM):

    96 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN OVER NICKEL

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFR24N15DPBF Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the IRFR24N15DPBF is 175°C.
  • Yes, the IRFR24N15DPBF is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal via to dissipate heat efficiently.
  • The recommended gate drive voltage for the IRFR24N15DPBF is between 10V and 15V to ensure proper switching and minimize power losses.
  • Yes, the IRFR24N15DPBF is suitable for high-frequency switching applications up to 100 kHz due to its low gate charge and fast switching times.

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Power Field-Effect Transistor, 24A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA