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IRFR5305 - Infineon

Description: MOSFET Transistor, P-Channel, TO-252AA

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IRFR5305 - Infineon PCB footprint - Other - Other - IRFR5305-3
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IRFR5305 Details

  • Manufacturer Part Number:

    IRFR5305

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China, Malaysia, Mexico, Usa, taiwan

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    280 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    31 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e0

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    240

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    110 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFR5305 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) of the IRFR5305 is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to ensure a long lifespan.
  • To calculate the power dissipation of the IRFR5305, you need to know the drain-source on-resistance (Rds(on)), the drain current (Id), and the voltage across the device (Vds). The power dissipation (Pd) can be calculated using the formula: Pd = Rds(on) * Id^2 + Vds * Id. You can find the Rds(on) value in the datasheet.
  • To minimize thermal resistance, it's recommended to use a PCB layout with a large copper area connected to the drain pad (thermal pad) of the IRFR5305. This helps to dissipate heat efficiently. Additionally, use multiple vias to connect the copper area to an internal copper plane or a heat sink to further reduce thermal resistance.
  • Yes, the IRFR5305 is suitable for high-frequency switching applications up to 1 MHz. However, you need to ensure that the device is properly driven and that the PCB layout is optimized for high-frequency operation. You may also need to add additional components, such as a gate resistor and a freewheeling diode, to prevent ringing and ensure reliable operation.
  • To protect the IRFR5305 from overvoltage and overcurrent conditions, you can use a combination of voltage regulators, zener diodes, and current sense resistors. Additionally, you can implement overvoltage and overcurrent protection circuits, such as a crowbar circuit or a foldback current limiting circuit, to prevent damage to the device.

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IRFR5305 Overview

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Part Image IRFR5305 International Rectifier

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Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR5305TRRPBF International Rectifier

Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image AUIRFR5305TR Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR5305TRRPBF Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

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