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IRFR5505 - Infineon

Description: MOSFET P-CH 55V 18A DPAK

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IRFR5505 - Infineon PCB footprint - Other - Other - D-PAK (TO-252AA)_2022
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IRFR5505 Details

  • Manufacturer Part Number:

    IRFR5505

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.4

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    150 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e0

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    64 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFR5505 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) that the IRFR5505 can withstand is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to ensure a long lifespan.
  • To calculate the power dissipation of the IRFR5505, you need to know the drain-source on-resistance (Rds(on)), the drain current (ID), and the voltage drop across the MOSFET (Vds). The power dissipation (Pd) can be calculated using the formula: Pd = Rds(on) * ID^2 + Vds * ID. You can find the Rds(on) and Vds values in the datasheet.
  • The recommended gate drive voltage for the IRFR5505 is between 10V and 15V. A higher gate drive voltage can reduce the turn-on resistance and improve the switching performance, but it may also increase the power consumption and EMI.
  • Yes, the IRFR5505 is suitable for high-frequency switching applications up to 1MHz. However, you need to ensure that the gate drive circuitry and the layout are optimized for high-frequency operation to minimize the switching losses and EMI.
  • To protect the IRFR5505 from overvoltage and overcurrent, you can use a voltage clamp circuit and a current sense resistor. The voltage clamp circuit can limit the voltage across the MOSFET, while the current sense resistor can detect overcurrent conditions and trigger a protection circuit to shut down the device.

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IRFR5505 Overview

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Part Image IRFR5505TRLPBF International Rectifier

Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR5505PBF International Rectifier

Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR5505GPBF International Rectifier

Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR5505TRPBF International Rectifier

Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR5505GTRRPBF Infineon Technologies AG

Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

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