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IRFR9024 - Vishay

Description: P-channel MOSFET,IRFR9024 8.8A 60V 75pcs

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IRFR9024 - Vishay PCB footprint - Other - Other - IRFR9024-2
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IRFR9024 Details

  • Manufacturer Part Number:

    IRFR9024

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-252AA

  • Package Description:

    D-PAK-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    300 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    8.8 A

  • Drain-source On Resistance-Max:

    0.28 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e0

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    35 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFR9024 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFR9024 is -55°C to 175°C, as specified in the datasheet. However, it's recommended to derate the power handling at higher temperatures to ensure reliable operation.
  • To ensure proper biasing, make sure to provide a stable voltage supply to the gate (Vgs) and ensure the drain-source voltage (Vds) is within the recommended range. A gate-source voltage (Vgs) of 10-15V is typically recommended for optimal performance.
  • For optimal thermal management, it's recommended to use a PCB with a thick copper layer (at least 2 oz) and a thermal relief pattern under the device. Ensure good thermal conductivity by using thermal vias and a heat sink if necessary. Keep the PCB layout compact and symmetrical to minimize parasitic inductance and capacitance.
  • Yes, the IRFR9024 is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure proper layout and decoupling to minimize ringing and oscillations.
  • To protect the IRFR9024 from overvoltage and overcurrent conditions, use a voltage clamp or a zener diode to limit the voltage across the device. Additionally, consider using a current sense resistor and a fuse or a current limiter to prevent excessive current flow.

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IRFR9024 Overview

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Part Image IRFR9024TRLPBF Vishay Siliconix

Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image SIHFR9024TR-GE3 Vishay Siliconix

Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image IRFR9024TRLPBF International Rectifier

Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR9024 Samsung Semiconductor

Power Field-Effect Transistor, 9.9A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SIHFR9024T Vishay Siliconix

Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

For a full list of alternate parts for IRFR9024, check out Findchips.com