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IRFR9120 - Vishay

Description: MOSFET RECOMMENDED ALT 844-IRFR9120PBF

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IRFR9120 - Vishay - PCB symbol
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IRFR9120 - Vishay PCB footprint - Other - Other - IRFR9120-2
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IRFR9120 Details

  • Manufacturer Part Number:

    IRFR9120

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-252AA

  • Package Description:

    DPAK-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    210 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    5.6 A

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    22 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFR9120 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) of the IRFR9120 is not explicitly stated in the datasheet, but it can be determined by consulting Vishay's application note AN1031, which provides guidelines for calculating the SOA of power MOSFETs.
  • To ensure proper thermal management, the IRFR9120 should be mounted on a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be designed to dissipate the maximum expected power loss, and the device should be attached using a thermally conductive interface material.
  • The recommended gate drive voltage for the IRFR9120 is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can reduce switching losses, but may also increase gate charge and oscillations.
  • Yes, the IRFR9120 can be used in high-frequency switching applications up to 1MHz, but the user should ensure that the device is properly snubbed to prevent ringing and oscillations. The user should also consider the effects of high-frequency switching on the device's thermal performance and electromagnetic interference (EMI).
  • To protect the IRFR9120 from ESD, the user should handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. The device should also be stored in an anti-static package, and the user should avoid touching the device's pins or leads.

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IRFR9120 Overview

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IRFR9120 Alternates

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Image Part Number Model
Part Image IRFR9120TRPBF Vishay Intertechnologies

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Part Image SIHFR9120TR-GE3 Vishay Siliconix

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Part Image IRFR9120 Intersil Corporation

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Part Image IRFR9120TRL Vishay Siliconix

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Part Image IRFR9120 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
For a full list of alternate parts for IRFR9120, check out Findchips.com