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IRFRC20TRLPBF-BE3 - Vishay

Description: MOSFETs TO252 600V 2A N-CH MOSFET

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IRFRC20TRLPBF-BE3 Details

  • Manufacturer Part Number:

    IRFRC20TRLPBF-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.3

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    74 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    4.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    8.6 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFRC20TRLPBF-BE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IRFRC20TRLPBF-BE3 is a standard SO-8 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure reliable operation in high-temperature environments, ensure proper thermal management by providing a heat sink, using a thermal interface material, and keeping the junction temperature (Tj) below the maximum rated value of 150°C.
  • The IRFRC20TRLPBF-BE3 can withstand voltage spikes or transients up to 1.5 times the maximum rated voltage (Vds) for a duration of less than 100ns. However, it's recommended to use a TVS diode or a voltage clamp to protect the device from excessive voltage transients.
  • Yes, the IRFRC20TRLPBF-BE3 is suitable for high-frequency switching applications up to 1MHz. However, ensure that the device is properly driven, and the PCB layout is optimized to minimize parasitic inductance and capacitance.
  • The optimal gate resistance (Rg) for the IRFRC20TRLPBF-BE3 depends on the specific application and switching frequency. A general guideline is to use a gate resistance between 10Ω to 100Ω. However, it's recommended to consult the application note or seek guidance from a qualified engineer to determine the optimal Rg value for your specific design.

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IRFRC20TRLPBF-BE3 Overview

Use the download button to access the IRFRC20TRLPBF-BE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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