Part Image

IRFRC20TRLPBF - Vishay

Description: IRFRC20TRLPBF, N-channel MOSFET Transistor 2 A 600 V, 3-Pin D-PAK

Download IRFRC20TRLPBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
IRFRC20TRLPBF - Vishay  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

IRFRC20TRLPBF Details

  • Manufacturer Part Number:

    IRFRC20TRLPBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252AA

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.3

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    450 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    4.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFRC20TRLPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFRC20TRLPBF is -55°C to 175°C.
  • Yes, the IRFRC20TRLPBF is a lead-free device, making it RoHS compliant.
  • The typical gate charge for the IRFRC20TRLPBF is around 120 nC.
  • Yes, the IRFRC20TRLPBF is suitable for high-frequency applications up to 1 MHz due to its low gate charge and fast switching times.
  • No, the IRFRC20TRLPBF is not a radiation-hardened device and is not suitable for use in high-radiation environments.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

IRFRC20TRLPBF Overview

Use the download button to access the IRFRC20TRLPBF 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFRC, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRFRC20TRLPBF

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

IRFRC20TRLPBF Alternates

Showing results

Image Part Number Model
Part Image SIHFRC20TR-GE3 Vishay Siliconix

Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image IRFRC20PBF Vishay Siliconix

Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image IRFRC20TRRPBF International Rectifier

Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFRC20 Vishay Siliconix

Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image IRFRC20TR Vishay Intertechnologies

Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

For a full list of alternate parts for IRFRC20TRLPBF, check out Findchips.com