Part Image

IRFRC20TRPBF-BE3 - Vishay

Description: MOSFET 600V N-CH

Download IRFRC20TRPBF-BE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRFRC20TRPBF-BE3 - Vishay PCB footprint - Other - Other - IRFRC20TRPBF-BE3-1
click to zoom

IRFRC20TRPBF-BE3 Details

  • Manufacturer Part Number:

    IRFRC20TRPBF-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    74 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    4.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    8.6 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFRC20TRPBF-BE3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFRC20TRPBF-BE3 is -55°C to 175°C.
  • Yes, the IRFRC20TRPBF-BE3 is a RoHS-compliant device, meaning it meets the European Union's Restriction of Hazardous Substances directive.
  • The typical gate charge for the IRFRC20TRPBF-BE3 is around 110 nC.
  • Yes, the IRFRC20TRPBF-BE3 is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
  • Yes, the IRFRC20TRPBF-BE3 is a logic-level MOSFET, meaning it can be driven directly from a microcontroller or other low-voltage logic source.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRFRC20TRPBF-BE3 Overview

Use the download button to access the IRFRC20TRPBF-BE3 schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFRC, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRFRC20TRPBF-BE3

Showing 0 results