Part Image

IRFS3107-7PPBF - Infineon

Description: IRFS3107-7PPBF N-Channel MOSFET, 260 A, 75 V HEXFET, 7-Pin D2PAK Infineon

Download IRFS3107-7PPBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRFS3107-7PPBF - Infineon PCB footprint - Other - Other - PG-TO263-7-3
click to zoom
3D Models
IRFS3107-7PPBF - Infineon  - 3D model - Other - PG-TO263-7-3
click to zoom

IRFS3107-7PPBF Details

  • Manufacturer Part Number:

    IRFS3107-7PPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    320 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    75 V

  • Drain Current-Max (ID):

    260 A

  • Drain-source On Resistance-Max:

    0.0026 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    400 pF

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    370 W

  • Pulsed Drain Current-Max (IDM):

    1060 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFS3107-7PPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFS3107-7PPBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended voltage and current ratings.
  • The recommended gate drive voltage for the IRFS3107-7PPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRFS3107-7PPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • Handle the device with ESD-protective equipment, use an ESD wrist strap, and ensure the device is stored in an ESD-protective package to prevent damage.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRFS3107-7PPBF Overview

Use the download button to access the IRFS3107-7PPBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFS3, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRFS3107-7PPBF

Showing 0 results

IRFS3107-7PPBF Alternates

Showing results

Image Part Number Model
Part Image IRFS3107-7PPBF International Rectifier

Power Field-Effect Transistor, 240A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB

Part Image AUIRFS3107-7TRL Infineon Technologies AG

Power Field-Effect Transistor, 240A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB

Part Image AUIRFS3107-7TRR International Rectifier

Power Field-Effect Transistor, 240A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB