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IRFS4010TRL7PP - Infineon

Description: IRFS4010TRL7PP N-Channel MOSFET, 190 A, 100 V HEXFET, 7 + Tab-Pin D2PAK Infineon

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IRFS4010TRL7PP - Infineon PCB footprint - Other - Other - PG-TO263-7-3_2-ren1
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IRFS4010TRL7PP Details

  • Manufacturer Part Number:

    IRFS4010TRL7PP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    190 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    380 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Time@Peak Reflow Temperature-Max (s):

    30

IRFS4010TRL7PP Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFS4010TRL7PP is -55°C to 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the IRFS4010TRL7PP is between 10V and 15V, with a maximum voltage of 20V.
  • To protect the IRFS4010TRL7PP, use overvoltage protection (OVP) and overcurrent protection (OCP) circuits, and ensure that the device is operated within its specified voltage and current ratings.
  • The maximum allowable power dissipation for the IRFS4010TRL7PP is 150W, but this can be affected by factors such as ambient temperature, heat sinking, and airflow.

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