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IRFS4115-7PPBF - Infineon

Description: Trans MOSFET N-CH 150V 105A 7-Pin(6+Tab) D2PAK Tube

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PCB Footprints
IRFS4115-7PPBF - Infineon PCB footprint - Other - Other - D2Pak - 7 Pin Package Outline
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3D Models
IRFS4115-7PPBF - Infineon  - 3D model - Other - D2Pak - 7 Pin Package Outline
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IRFS4115-7PPBF Details

  • Manufacturer Part Number:

    IRFS4115-7PPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    230 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    105 A

  • Drain-source On Resistance-Max:

    0.0118 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    380 W

  • Pulsed Drain Current-Max (IDM):

    420 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN OVER NICKEL

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFS4115-7PPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFS4115-7PPBF is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -20°C to 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's recommended to use a heat sink with a thermal resistance of less than 10°C/W. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins. You can also consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.
  • For optimal performance and to minimize electromagnetic interference (EMI), it's recommended to follow a 2-layer or 4-layer PCB design with a solid ground plane. Keep the high-frequency traces short and away from the device's pins. Use a decoupling capacitor (e.g., 100nF) close to the device's VCC pin, and ensure the PCB layout is symmetrical to reduce radiation.
  • To protect the IRFS4115-7PPBF from ESD, handle the device by the body or use an ESD wrist strap or mat. Ensure the PCB is designed with ESD protection in mind, such as using ESD diodes or resistors. During assembly, use ESD-safe tools and materials, and avoid touching the device's pins or exposed internal components.
  • The recommended gate drive voltage for the IRFS4115-7PPBF is between 10V and 15V, with a maximum voltage of 20V. Ensure the gate drive voltage is within the specified range to prevent damage to the device or affect its performance.

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IRFS4115-7PPBF Overview

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