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IRFS52N15DTRLP - Infineon

Description: MOSFET MOSFT 150V 60A 32mOhm 60nC

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IRFS52N15DTRLP - Infineon PCB footprint - Other - Other - IRFS52N15DTRLP-2
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IRFS52N15DTRLP Details

  • Manufacturer Part Number:

    IRFS52N15DTRLP

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    D2PAK-3/2

  • Country Of Origin:

    Mainland China, Mexico, Usa

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    470 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    51 A

  • Drain-source On Resistance-Max:

    0.032 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    240 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFS52N15DTRLP Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IRFS52N15DTRLP is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation.
  • To ensure proper cooling, make sure to provide a sufficient heat sink with a thermal resistance of less than 10°C/W. Also, ensure good thermal contact between the device and the heat sink using a thermal interface material.
  • The recommended gate drive voltage for the IRFS52N15DTRLP is between 10V and 15V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
  • Yes, the IRFS52N15DTRLP is suitable for high-frequency switching applications up to 100 kHz. However, it's crucial to consider the device's switching losses, gate drive requirements, and thermal management when designing the application.
  • To protect the IRFS52N15DTRLP from overvoltage and overcurrent, use a suitable voltage regulator and current limiter in your design. Additionally, consider using a gate driver with built-in overcurrent protection and undervoltage lockout.

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IRFS52N15DTRLP Overview

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