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IRFS7434TRL7PP - Infineon

Description: IRFS7434TRL7PP N-Channel MOSFET, 362 A, 40 V HEXFET, 7-Pin D2PAK Infineon

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PCB Footprints
IRFS7434TRL7PP - Infineon PCB footprint - Other - Other - PG-TO263-7-3_2
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IRFS7434TRL7PP - Infineon  - 3D model - Other - PG-TO263-7-3_2
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IRFS7434TRL7PP Details

  • Manufacturer Part Number:

    IRFS7434TRL7PP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    880 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    240 A

  • Drain-source On Resistance-Max:

    0.001 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1060 pF

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    245 W

  • Pulsed Drain Current-Max (IDM):

    1300 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    192 ns

  • Turn-on Time-Max (ton):

    148 ns

IRFS7434TRL7PP Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFS7434TRL7PP is -40°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal design and layout guidelines, and to ensure proper heat sinking and thermal management.
  • The recommended gate drive voltage for the IRFS7434TRL7PP is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRFS7434TRL7PP, use overvoltage protection (OVP) and overcurrent protection (OCP) circuits, and ensure that the device is operated within its recommended operating conditions.
  • The maximum allowable power dissipation for the IRFS7434TRL7PP is dependent on the operating conditions and thermal design. Refer to the datasheet for specific power dissipation limits.

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IRFS7434TRL7PP Overview

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Part Image IRFS7434-7PPBF Infineon Technologies AG

Power Field-Effect Transistor, 240A I(D), 40V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB