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IRFS7534-7PPBF - Infineon

Description: N-Kanal MOSFET IRFS7534-7PPBF, 60 V, 255 A, 2 mΩ, D2PAK (TO-263) 7-Pin, 290 W, Serie HEXFET Si

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IRFS7534-7PPBF - Infineon PCB footprint - Other - Other - D2Pak-7Pin
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IRFS7534-7PPBF - Infineon  - 3D model - Other - D2Pak-7Pin
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IRFS7534-7PPBF Details

  • Manufacturer Part Number:

    IRFS7534-7PPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    773 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    240 A

  • Drain-source On Resistance-Max:

    1.95 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    290 W

  • Pulsed Drain Current-Max (IDM):

    790 A

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN OVER NICKEL

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFS7534-7PPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFS7534-7PPBF is -55°C to 150°C.
  • To ensure reliability, follow the recommended thermal design guidelines, use a suitable heat sink, and ensure proper PCB layout and thermal management.
  • The maximum allowable power dissipation for the IRFS7534-7PPBF is 78W at a case temperature of 25°C.
  • Handle the device with ESD-protective equipment, use an ESD wrist strap, and follow proper ESD handling procedures to prevent damage.
  • The recommended gate drive voltage for the IRFS7534-7PPBF is 10V to 15V, with a maximum gate-source voltage of ±20V.

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Part Image IRFS7534TRL7PP Infineon Technologies AG

Power Field-Effect Transistor, 240A I(D), 60V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB