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IRFS7540TRLPBF - Infineon

Description: MOSFET MOSFET N CH 60V 110A D2PAK

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PCB Footprints
IRFS7540TRLPBF - Infineon PCB footprint - Other - Other - D2 Pak (TO-263AB)-2021
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IRFS7540TRLPBF - Infineon  - 3D model - Other - D2 Pak (TO-263AB)-2021
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IRFS7540TRLPBF Details

  • Manufacturer Part Number:

    IRFS7540TRLPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    313 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    110 A

  • Drain-source On Resistance-Max:

    0.0051 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    270 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    160 W

  • Pulsed Drain Current-Max (IDM):

    430 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFS7540TRLPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFS7540TRLPBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified ratings and guidelines.
  • Infineon provides a reference design and layout guidelines in the application note AN2013-01, which should be followed for optimal thermal performance and reliability.
  • Yes, the IRFS7540TRLPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout, decoupling, and snubber circuits are used to minimize ringing and EMI.
  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or current sense resistor, to prevent damage from voltage and current surges.

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Part Image IRFS7540PBF Infineon Technologies AG

Power Field-Effect Transistor, 110A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB