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IRFTS8342TRPBF - Infineon

Description: MOSFET 30V 8.2A 19mOhm 4.8 Qg

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Symbol
IRFTS8342TRPBF - Infineon - PCB symbol
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PCB Footprints
IRFTS8342TRPBF - Infineon PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOP-6-2020
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3D Models
IRFTS8342TRPBF - Infineon - 3D model - SOT23 (6-Pin) - TSOP-6-2020
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IRFTS8342TRPBF Details

  • Manufacturer Part Number:

    IRFTS8342TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    8.2 A

  • Drain-source On Resistance-Max:

    0.019 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFTS8342TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFTS8342TRPBF is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and monitoring junction temperature.
  • For optimal performance, it's recommended to follow Infineon's guidelines for PCB layout, including using a solid ground plane, minimizing trace lengths, and using decoupling capacitors.
  • To prevent electrostatic discharge (ESD) damage, it's essential to follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in the design.
  • The recommended gate drive circuits for the IRFTS8342TRPBF include using a dedicated gate driver IC, such as the Infineon ICE2QS01G, and following the application note guidelines for gate drive design.

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IRFTS8342TRPBF Overview

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