Part Image

IRFU014PBF - Vishay

Description: IRFU014PBF

Download IRFU014PBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRFU014PBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-251AA (HIGH VOLTAGE)
click to zoom
3D Models
IRFU014PBF - Vishay  - 3D model - Transistor Outline, Vertical - TO-251AA (HIGH VOLTAGE)
click to zoom

IRFU014PBF Details

  • Manufacturer Part Number:

    IRFU014PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.1

  • Avalanche Energy Rating (Eas):

    47 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    7.7 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    25 W

  • Pulsed Drain Current-Max (IDM):

    31 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFU014PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFU014PBF is -55°C to 175°C.
  • Yes, the IRFU014PBF is a fast-recovery diode with a recovery time of 35 ns.
  • The maximum repetitive peak reverse voltage (VRRM) for the IRFU014PBF is 1400 V.
  • Yes, the IRFU014PBF is suitable for high-frequency applications due to its low reverse recovery time and low capacitance.
  • Yes, the IRFU014PBF is a hermetically sealed device in a TO-220AC package.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRFU014PBF Overview

Use the download button to access the IRFU014PBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFU0, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRFU014PBF

Showing 0 results

IRFU014PBF Alternates

Showing results

Image Part Number Model
Part Image IRFU014 International Rectifier

Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA